SSFD3006
Silikron
523.03kb
Mosfet. It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features com
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SSFD3004 - MOSFET
(Silikron)
SSFD3004
DESCRIPTION
The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use a.
SSFD3005 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-30V
RDS(on) 6.3mΩ(typ)
ID
-85A
TO-252
Features and Benefits:
Advanced MOSFET process technology Special.
SSFD3912 - 30V N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
V(BR)DSS RDS(ON)
ID
30V 18mΩ
28A
SSFD3912
30V N-Channel MOSFET
D
S G
Features and Benefits
TO-252 (DPAK)
Advanced.
SSFD4004 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on) 3.2mohm(typ.)
ID 145A
TO-252
Features and Benefits:
Advanced MOSFET process technology Speci.
SSFD4024 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
40V
RDS(on)
30 mohm
ID 12A
SSFD4024
TO-252 top view
F.
SSFD4031L - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-40V
RDS(on)
15mΩ(typ.)
ID
-40A
Features and Benefits:
Advanced MOSFET process technology Special design.
SSFD6025B - 60V P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
-60V
SSFD6025B
60V P-Channel MOSFET
D D
RDS(ON)
12mΩ (typ.)
G
ID
-60A
S G
Features and Benefits
TO-252 (D.
SSFD6035 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-60V
RDS(on)
31mΩ
ID
-26A
TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology Speci.
SSFD6035 - 60V P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDS
-60V
RDS(ON) ID
40mΩ -26A
Features and Benefits
§ Advanced MOSFET process technology § Ideal for high efficiency.
SSFD6035U - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-60V
RDS(on)
23mΩ
ID
-26A
TO-252 (DPAK)
Main Features
Advanced MOSFET process technology Special design.