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GS81302TT10E, GS81302TT107E-450 144Mb SigmaDDR-II+ Burst of 2 SRAM

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Description

GS81302TT07/10/19/37E-450/400/350/333/300 165-Bump BGA Commercial Temp Industrial Temp 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 450 MHz *300 MHz.
Table Symbol Description Type Comments SA Synchronous Address Inputs Input. R/W Synchronous Read Input High: Read Low: Write BW0.

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This datasheet PDF includes multiple part numbers: GS81302TT10E, GS81302TT107E-450. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
GS81302TT10E, GS81302TT107E-450
Manufacturer
GSI Technology
File Size
216.17 KB
Datasheet
GS81302TT107E-450-GSITechnology.pdf
Description
144Mb SigmaDDR-II+ Burst of 2 SRAM
Note
This datasheet PDF includes multiple part numbers: GS81302TT10E, GS81302TT107E-450.
Please refer to the document for exact specifications by model.

Features

* 2.0 Clock Latency
* Simultaneous Read and Write SigmaDDRâ„¢ Interface
* Common I/O bus
* JEDEC-standard pinout and package
* Double Data Rate interface
* Byte Write controls sampled at data-in time
* Burst of 2 Read and Write
* Dual-Ran

Applications

* Therefore, the SigmaDDR-II+ SRAM interface and truth table are optimized for burst reads and writes. Common I/O SRAMs are unpopular in applications where alternating reads and writes are needed because bus turnaround delays can cut high speed Common I/O SRAM data bandwidth in half. Burst Operations

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