| Part number | GS8150V36AB-300, GS8150V18AB-357 |
|---|---|
| Manufacturer | GSI Technology |
| File Size | 842.40 KB |
| Description | 1M x 18/ 512K x 36 18Mb Register-Register Late Write SRAM |
| Datasheet |
 GS8150V18AB-357_GSITechnology.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: GS8150V36AB-300, GS8150V18AB-357. Please refer to the document for exact specifications by model. |
250 MHz 357 MHz 1.8 V VDD 1.5 V or 1.8 V HSTL I/O Because GS8150V18/36A are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock.Write cycles are internally selftimed and initiated by the rising edge of the clock input.This feature eliminates complex off-chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.GS8150V18/36A support pipelined reads utilizing a risingedge-triggere
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