GS8170DW36C (GS8170DW36C / GS8170DW72C) Double Late Write SigmaRAM

GSI Technology

Description

Preliminary GS8170DW36/72C-333/300/250/200 209-Bump BGA Commercial Temp Industrial Temp 18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM™ 200 MHz .
Because SigmaRAMs are synchronous devices, address data inputs and read/write control inputs are captured on the rising edge of the input clock.

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Datasheet Specifications

Part number: GS8170DW36C
Manufacturer: GSI Technology
File Size: 673.20 KB
Datasheet: GS8170DW36C_GSITechnology.pdf
Description: (GS8170DW36C / GS8170DW72C) Double Late Write SigmaRAM

Features

* Double Late Write mode, Pipelined Read mode
* JEDEC-standard SigmaRAM™ pinout and package
* 1.8 V +150/
* 100 mV core power supply
* 1.8 V CMOS Interface
* ZQ controlled user-selectable output drive strength
* Dual Cycle Deselect
* Burs

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GS8170DW36C GS8170DW36C GS8170DW72C Double Late Write SigmaRAM GSI Technology

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