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GS8321E32E-V - 36Mb Sync Burst SRAMs

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GSI Technology

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GS8321E32E-V 36Mb Sync Burst SRAMs by GSI Technology - Datasheet Preview — Datasheet preview – GS8321E32E-V

Datasheet Details

Part number	GS8321E32E-V
Manufacturer	GSI Technology
File Size	724.12 KB
Description	36Mb Sync Burst SRAMs
Datasheet	GS8321E32E-V Datasheet
Note	This datasheet PDF includes multiple part numbers: GS8321E32E-V, GS8321E18E-V. Please refer to the document for exact specifications by model.
Additional preview pages of the GS8321E32E-V datasheet.

Product details

Description

Applications The GS8321E18/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

FT pin for user-configurable flow through or pipeline operation.
Dual Cycle Deselect (DCD) operation.
IEEE 1149.1 JTAG-compatible Boundary Scan.
1.8 V or 2.5 V core power supply.
1.8 V or 2.5 V I/O supply.
LBO pin for Linear or Interleaved Burst mode.
Internal input resistors on mode pins allow floating mode pins.
Default to Interleaved Pipeline mode.
Byte Write (BW) and/or Global Write (GW) operation.
Int.

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Other Datasheets by GSI Technology

GS8321E32E - 36Mb Sync Burst SRAMs
GS8321E32GE - 36Mb Sync Burst SRAMs
GS8321E32GE-V - 36Mb Sync Burst SRAMs
GS8321E36E - 36Mb Sync Burst SRAMs
GS8321E36E-V - 36Mb Sync Burst SRAMs
GS8321E36GE - 36Mb Sync Burst SRAMs

Published: Oct 14, 2016 |