* Capable of 2.5V gate drive Lower on-resistance Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System. Applications Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M M
G2306
GTM
408.89 KB
N-channel enhancement mode power mosfet.
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Pb Free Plating Product
CORPORATION
G2306
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2004/10/12 REVISED DATE :2005/03.
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2.5A
Descr.
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Pb Free Plating Product
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BVDSS RDS(ON) ID
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Desc.
