G2306A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/17 REVISED DATE :2006/07/17C G2306A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS .
The G2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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Datasheet Specifications

Part number: G2306A
Manufacturer: GTM
File Size: 351.69 KB
Datasheet: G2306A_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dra

Applications

* Capable of 2.5V gate drive

G2306A Distributors

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G2306A N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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