G2306A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

G2306A Datasheet Preview — Preview of G2306A PDF

Datasheet Details

Part number	G2306A
Manufacturer	GTM
File Size	351.69 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	G2306A_GTM.pdf

G2306A Product details

Description

The G2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. Capable of 2.5V gate drive Lower on-resistance

Features

Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V 3 Continuous Drain Current , VGS@4.5V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @Ta=25.

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Published: Sep 18, 2007 |