GBC556 PNP EPITAXIAL TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B GBC556 .
Features PNP SILICON TRANSISTOR The GBC556 is designed for drive and output-stages of audio amplifiers.

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Datasheet Specifications

Part number: GBC556
Manufacturer: GTM
File Size: 205.60 KB
Datasheet: GBC556_GTM.pdf
Description: PNP EPITAXIAL TRANSISTOR

Features

* PNP SILICON TRANSISTOR The GBC556 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC546 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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