Datasheet4U Logo Datasheet4U.com

GE2026 NPN EPITAXIAL PLANAR TRANSISTOR

GE2026 Description

ISSUED DATE :2005/09/05 REVISED DATE : GE2026 NPN EPITAXIAL PLANAR TRANSISTOR .
The GE2026 is designed for general purpose application. Low Collector Saturation Voltage : VCE (sat) =1.

GE2026 Features

* Low Collector Saturation Voltage : VCE (sat) =1.0V (Max. ) @ IC=2A, IB=0.2A, Package Dimensions Absolute Maximum Ratings (TA=25ะบ) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Tot

GE2026 Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

📥 Download Datasheet

Preview of GE2026 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
GE2026
Manufacturer
GTM
File Size
382.21 KB
Datasheet
GE2026_GTM.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR

📁 Related Datasheet

  • GE200NB60S - N-CHANNEL IGBT (ST Microelectronics)
  • GE28F004B3 - 3 Volt Advanced Boot Block Flash Memory (Intel)
  • GE28F008B3 - 3 Volt Advanced Boot Block Flash Memory (Intel)
  • GE28F016B3 - 3 Volt Advanced Boot Block Flash Memory (Intel)
  • GE28F128K18 - Intel StrataFlash Memory (Intel Corporation)
  • GE28F128K3 - Intel StrataFlash Memory (Intel Corporation)
  • GE28F128W18 - Wireless Flash Memory (Intel)
  • GE28F128W30 - Wireless Flash Memory (Intel)

📌 All Tags

NPN EPITAXIAL PLANAR TRANSISTOR GTM
GTM GE2026-like datasheet