GE2026 NPN EPITAXIAL PLANAR TRANSISTOR

GTM

Description

ISSUED DATE :2005/09/05 REVISED DATE : GE2026 NPN EPITAXIAL PLANAR TRANSISTOR .
The GE2026 is designed for general purpose application. Low Collector Saturation Voltage : VCE (sat) =1.

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Datasheet Specifications

Part number: GE2026
Manufacturer: GTM
File Size: 382.21 KB
Datasheet: GE2026_GTM.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR

Features

* Low Collector Saturation Voltage : VCE (sat) =1.0V (Max. ) @ IC=2A, IB=0.2A, Package Dimensions Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Tot

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

GE2026 Distributors

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GE2026 NPN EPITAXIAL PLANAR TRANSISTOR GTM

GTM GE2026-like datasheet