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GE200NB60S

N-CHANNEL IGBT

GE200NB60S Features

* TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C STGE200NB60S 600V

* High input impedance (voltage driven) Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability ISOTOP Description Using the latest high voltag

GE200NB60S General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). Internal .

GE200NB60S Datasheet (297.42 KB)

Preview of GE200NB60S PDF

Datasheet Details

Part number:

GE200NB60S

Manufacturer:

STMicroelectronics ↗

File Size:

297.42 KB

Description:

N-channel igbt.

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GE200NB60S N-CHANNEL IGBT ST Microelectronics

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