GE75NF60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/12/01 REVISED DATE : GE75NF60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) I.
Features. High Density Cell Design for Ultra Low On-Resistance. High power and Current handing capability Package Dimensions REF.

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Datasheet Specifications

Part number: GE75NF60
Manufacturer: GTM
File Size: 291.21 KB
Datasheet: GE75NF60_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* High Density Cell Design for Ultra Low On-Resistance
* High power and Current handing capability Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17

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GE75NF60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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