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GE75NF60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

  • High Density Cell Design for Ultra Low On-Resistance.
  • High power and Current handing capability Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Cu.

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Datasheet preview – GE75NF60

Datasheet Details

Part number GE75NF60
Manufacturer GTM
File Size 291.21 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GE75NF60 Datasheet
Additional preview pages of the GE75NF60 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/12/01 REVISED DATE : GE75NF60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 12m 75A The GE75NF60 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Description Features *High Density Cell Design for Ultra Low On-Resistance *High power and Current handing capability Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.
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