GI405 Datasheet (GTM) - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GI405, P-CHANNEL ENHANCEMENT MODE POWER MOSFET

The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance.

The through-hole version (TO-251) is available for low-profile applications and suited for high current load applications.

*Simple Drive Requirement *Lower On-resistance

GI405 Features

* Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Volt