GI40T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2005/11/22 REVISED DATE : GI40T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 25m 28A Descri.
The GI40T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: GI40T03
Manufacturer: GTM
File Size: 235.92 KB
Datasheet: GI40T03_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement
* Fast Switching Characteristic
* RoHS Compliant Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.2

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GI40T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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