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GI9T16

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GI9T16 Features

* Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Volt

GI9T16 General Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 25m 25A The GI9T16 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications .

GI9T16 Datasheet (266.89 KB)

Preview of GI9T16 PDF

Datasheet Details

Part number:

GI9T16

Manufacturer:

GTM

File Size:

266.89 KB

Description:

N-channel enhancement mode power mosfet.

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TAGS

GI9T16 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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