GISD1802 PNP EPITAXIAL PLANAR SILICON TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2005/01/13 REVISED DATE : GISD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR .
The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. Adoption of FBET, MBIT processes.

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Datasheet Specifications

Part number: GISD1802
Manufacturer: GTM
File Size: 569.43 KB
Datasheet: GISD1802_GTM.pdf
Description: PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Features

* Adoption of FBET, MBIT processes
* Large current capacity and wide ASO
* Low collector-to-emitter saturation voltage
* Fast switching speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF.

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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