GISD1803 NPN EPITAXIAL PLANAR SILICON TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2005/01/13 REVISED DATE : GISD1803 NPN EPITAXIAL PLANAR SILICON TRANSISTOR .
The GISD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current switching applications. Low coll.

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Datasheet Specifications

Part number: GISD1803
Manufacturer: GTM
File Size: 298.93 KB
Datasheet: GISD1803_GTM.pdf
Description: NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Features

* Low collector-to-emitter saturation voltage.
* High current and high fT
* Excellent linearity of hFE
* Fast switching time Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Mill

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