GJ01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B GJ01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.
The GJ01N60 provide the designer with the best combination of fast switching.

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Datasheet Specifications

Part number: GJ01N60
Manufacturer: GTM
File Size: 264.41 KB
Datasheet: GJ01N60_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Dynamic dv/dt Rating
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min.

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GJ01N60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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