GJ08P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/21 REVISED DATE : GJ08P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID.
The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: GJ08P10
Manufacturer: GTM
File Size: 302.49 KB
Datasheet: GJ08P10_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic
* RoHS Compliant Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min

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GJ08P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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