GJ1060 NPN EPITAXIAL PLANAR TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2005/09/05 REVISED DATE : GJ1060 NPN EPITAXIAL PLANAR TRANSISTOR .
The GJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Low Collector-Em.

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Datasheet Specifications

Part number: GJ1060
Manufacturer: GTM
File Size: 423.11 KB
Datasheet: GJ1060_GTM.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR

Features

* Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max. ) @ IC=3A, IB=0.3A, Package Dimensions TO-252 Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Colle

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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GJ1060 NPN EPITAXIAL PLANAR TRANSISTOR GTM

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