Datasheet Details
- Part number
- GJ1060
- Manufacturer
- GTM
- File Size
- 423.11 KB
- Datasheet
- GJ1060_GTM.pdf
- Description
- NPN EPITAXIAL PLANAR TRANSISTOR
GJ1060 Description
www.DataSheet4U.com ISSUED DATE :2005/09/05 REVISED DATE : GJ1060 NPN EPITAXIAL PLANAR TRANSISTOR .
The GJ1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching.
Low Collector-Em.
GJ1060 Features
* Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max. ) @ IC=3A, IB=0.3A,
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25ะบ)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Colle
GJ1060 Applications
* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07
📁 Related Datasheet
📌 All Tags
GJ1060 Stock/Price