* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.5
GJ90T03
GTM
260.95 KB
N-channel enhancement mode power mosfet.
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Pb Free Plating Product
ISSUED DATE :2005/02/22 REVISED DATE :2005/12/01B
GJ90T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDS.
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