* Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Vol
GJ9585
GTM
262.73 KB
P-channel enhancement mode power mosfet.
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/12/05 REVISED DATE :
GJ9585
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
.
📁 Related Datasheet
GJ9563 P-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GJ9575 P-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GJ90T03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GJ9435 P-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GJ965 NPN EPITAXIAL PLANAR TRANSISTOR (GTM)
GJ9912 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GJ9915 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GJ9916 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GJ9960 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
GJ9962 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
