GJ9T18 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GJ9T18 N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GJ9T18

Datasheet Details

Part number	GJ9T18
Manufacturer	GTM
File Size	262.34 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GJ9T18 Datasheet
Additional preview pages of the GJ9T18 datasheet.

Product details

Description

The GJ9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Capable of 2.5V gate drive Low Gate Charge

Features

Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 20 ±12 38 24.

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Published: Sep 4, 2007 |