GJSD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR

GTM

Description

www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1802 .
Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical e.

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Datasheet Specifications

Part number: GJSD1802
Manufacturer: GTM
File Size: 517.26 KB
Datasheet: GJSD1802_GTM.pdf
Description: NPN EPITAXIAL PLANAR SILICON TRANSISTOR

Features

* NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.
* Adoption of FBET, MBIT processes
* Large current capacity and wide ASO
* Low collector-to-emitter saturation voltage
* Fast switching s

Applications

* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07

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GJSD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR GTM

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