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GJSD1803 NPN EPITAXIAL PLANAR SILICON TRANSISTOR

GJSD1803 Description

www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1803 .
Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1803 applies to relay drivers, high-speed inverters, converters, and other genera.

GJSD1803 Applications

* Low collector-to-emitter saturation voltage.
* High current and high fT
* Excellent linearity of hFE
* Fast switching time Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R M

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Datasheet Details

Part number
GJSD1803
Manufacturer
GTM
File Size
257.35 KB
Datasheet
GJSD1803_GTM.pdf
Description
NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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