GL2306A N-channel Power MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE :2006/05/03B GL2306A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 40m .
The GL2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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Datasheet Specifications

Part number: GL2306A
Manufacturer: GTM
File Size: 239.53 KB
Datasheet: GL2306A-GTM.pdf
Description: N-channel Power MOSFET

Features

* Capable of 2.5V gate drive
* Lower on-resistance Package Dimensions SOT-223 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor

GL2306A Distributors

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GL2306A N-channel Power MOSFET GTM

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