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GL2308 N-channel Power MOSFET

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Description

Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GL2308 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 160m 3A Descrip.
The GL2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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Datasheet Specifications

Part number
GL2308
Manufacturer
GTM
File Size
220.02 KB
Datasheet
GL2308-GTM.pdf
Description
N-channel Power MOSFET

Features

* Simple Drive Requirement
* Surface Mount Device Package Dimensions SOT-223 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor O

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