GS7407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2006/08/15 REVISED DATE : GS7407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 135m -1.2A Des.
The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.

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GS7407 Datasheet Preview — Preview of GS7407 PDF

Datasheet Specifications

Part number: GS7407
Manufacturer: GTM
File Size: 273.64 KB
Datasheet: GS7407_GTM.pdf
Description: P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Lower Gate Charge
* Small Package Outline
* RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating

GS7407 Distributors

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GS7407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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