GS7407 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Details

Part number	GS7407
Manufacturer	GTM
File Size	273.64 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GS7407_GTM.pdf

The GS7407 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.

Lower Gate Charge.
Small Package Outline.
RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol Rthj-a REF. A A1 A2 D E.

📁 GS7407 Similar Datasheet

Other Datasheets by GTM

Published: Sep 27, 2007 |