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GSC1815 - NPN SILICON TRANSISTOR

Datasheet Summary

Description

The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications.

Features

  • Complementary to GSA1015 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Power Dissipation PD REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Mil.

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Datasheet Details

Part number GSC1815
Manufacturer GTM
File Size 171.29 KB
Description NPN SILICON TRANSISTOR
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www.DataSheet4U.com CORPORATION ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B GSC1815 NPN EPITAXIAL PLANAR TANSISTOR Description The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Complementary to GSA1015 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Power Dissipation PD REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.
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