DESCRIPTION
FEATURES
ԦHigh Collector to Emitter Voltage VCEO ԦHigh Transition Frequency fT Package Dimensions D TO-92 E S1 A b1 S E A T IN G PLANE L C e1 b e ABSOLUTE MAXIMUM RATINGS
(TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Peak Collector Current ICP Collector Current (continuous) IC Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 - 1.150 1.390 2.42 2.66 Ratings 300 300 7 100 70 750 150 -55 ~ +150 Unit V V V mA mA mW к к ELECTRICAL CHARACTERISTICS
(TA = 25к unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 300 - - V IC=100uA, IE=0 BVCEO 300 - - V IC=1mA, IB=0 BVEBO ICEO 7 - - V IE=1uA, IC=0 - - 1 uA VCE=120V VCE(sat) - - 1.2 V IC=50mA, IB=5mA hFE 30 - 220 VCE=10V, IC=5mA fT 50 80 - MHz VCE=10V, IC=-10mA, f=200MHz...
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