Datasheet4U Logo Datasheet4U.com

GSC1473A - NPN SILICON TRANSISTOR

General Description

The GSC1473A is designed for general amplification.

Key Features

  • High Collector to Emitter Voltage VCEO.
  • High Transition Frequency fT Package Dimensions D TO-92 E S1 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Peak Collector Current ICP Collector Current (continuous) IC Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg REF. A S1 b b1 C Millimeter Min. Max. 4.45.

📥 Download Datasheet

Datasheet Details

Part number GSC1473A
Manufacturer GTM
File Size 163.58 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet GSC1473A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GSC-2401-R 100/1000BASE- Tx Transformer U-TRON
GSC-4807-R 100/1000 BASE-Tx Transformer U-TRON
GSC20-12 20 WATT GLOBAL PERFORMANCE SWITCHERS SL Power Electronics
GSC20-15 20 WATT GLOBAL PERFORMANCE SWITCHERS SL Power Electronics
GSC20-24 20 WATT GLOBAL PERFORMANCE SWITCHERS SL Power Electronics

Other Datasheets by GTM

Part Number Description
GSC103 DUAL OP-AMP
GSC103A DUAL OPERATIONAL AMP AND VOLTAGE REFERENCE
GSC1118 1A Positive Low Dropout Fixed-mode Regulator
GSC1384 NPN EPITAXIAL PLANAR TRANSISTOR
GSC1815 NPN SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ISSUED DATE :2005/04/15 REVISED DATE :2006/03/21B GSC1473A NPN SILICON TRANSISTOR Description The GSC1473A is designed for general amplification. Features ԦHigh Collector to Emitter Voltage VCEO ԦHigh Transition Frequency fT Package Dimensions D TO-92 E S1 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Peak Collector Current ICP Collector Current (continuous) IC Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 - 1.