Datasheet4U Logo Datasheet4U.com

GSC1815 - NPN SILICON TRANSISTOR

General Description

The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications.

Key Features

  • Complementary to GSA1015 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Power Dissipation PD REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Mil.

📥 Download Datasheet

Datasheet Details

Part number GSC1815
Manufacturer GTM
File Size 171.29 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet GSC1815 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GSC-2401-R 100/1000BASE- Tx Transformer U-TRON
GSC-4807-R 100/1000 BASE-Tx Transformer U-TRON
GSC20-12 20 WATT GLOBAL PERFORMANCE SWITCHERS SL Power Electronics
GSC20-15 20 WATT GLOBAL PERFORMANCE SWITCHERS SL Power Electronics
GSC20-24 20 WATT GLOBAL PERFORMANCE SWITCHERS SL Power Electronics

Other Datasheets by GTM

Part Number Description
GSC103 DUAL OP-AMP
GSC103A DUAL OPERATIONAL AMP AND VOLTAGE REFERENCE
GSC1118 1A Positive Low Dropout Fixed-mode Regulator
GSC1384 NPN EPITAXIAL PLANAR TRANSISTOR
GSC1473A NPN SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com CORPORATION ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B GSC1815 NPN EPITAXIAL PLANAR TANSISTOR Description The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications. Features *Complementary to GSA1015 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings at Ta = 25к Parameter Symbol Junction Temperature Tj Storage Temperature Tstg Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Power Dissipation PD REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.