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GSC4410 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/01 REVISED DATE :2005/09/30B GSC4410 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS.
The GSC4410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number
GSC4410
Manufacturer
GTM
File Size
335.05 KB
Datasheet
GSC4410_GTM.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Dynamic dv/dt Rating
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0̓ 8̓ 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0

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