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GSC4762 - NPN EPITAXIAL SILICON TRANSISTOR

Description

The GSC4672 is designed for low frequency amplifier applications.

Features

  • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA.
  • Excellent DC current gain characteristics Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current (DC) IC Collector Current (Pulse PW=10ms) IC Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg R.

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Datasheet Details

Part number GSC4762
Manufacturer GTM
File Size 185.40 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet GSC4762 Datasheet
Additional preview pages of the GSC4762 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com ISSUED DATE :2005/07/15 REVISED DATE : GSC4762 NPN EPITAXIAL SILICON TRANSISTOR Description The GSC4672 is designed for low frequency amplifier applications. Features ԦLow saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA ԦExcellent DC current gain characteristics Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L C e1 b e Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current (DC) IC Collector Current (Pulse PW=10ms) IC Total Device Dissipation PD Junction Temperature TJ Storage Temperature Tstg REF. A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 - 0.36 0.51 0.36 0.76 0.36 0.51 REF.
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