Datasheet Specifications
- Part number
- GSS4936
- Manufacturer
- GTM
- File Size
- 334.28 KB
- Datasheet
- GSS4936_GTM.pdf
- Description
- POWER MOSFET
Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/10/31 REVISED DATE : GSS4936 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID.Features
* Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous DApplications
* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07GSS4936 Distributors
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