• Part: GTS9928E
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Category: MOSFET
  • Manufacturer: GTM
  • Size: 442.82 KB
Download GTS9928E Datasheet PDF
GTM
GTS9928E
Description Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS@4.5V Drain Current , VGS@4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 1 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 12 5.0 3.5 25 1 0.008 -55 ~ +150 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient Symbol Max. Rthj-a Ratings 125 Unit /W 1/6 ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 20 0.5 Typ. 0.02 21 15.9 1.5 7.4 6.2 9 30 11 530 245 125 Max. 10 1 25 22 28 p F ns n C Unit V V/ V S u A u A...