Datasheet4U Logo Datasheet4U.com

GTS9926 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: GTM

📥 Download Datasheet

Datasheet Details

Part number GTS9926
Manufacturer GTM
File Size 338.65 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTS9926 Datasheet

General Description

The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Overview

Pb Free Plating Product ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B GTS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V.

Key Features

  • Low on-resistance.
  • Capable of 2.5V gate drive.
  • Low drive current Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current3 ,VGS@4.5V Drain Current3 ,VGS@4.5V Pulsed Drain Current1, VGS ID @Ta=25к ID @Ta=70к IDM Power Dissipat.

More Datasheets from GTM

Part Number Description
GTS9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTS9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTS9928E N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTS6923 P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET