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GTS9926 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

ultra low on-resistance and cost-effectiveness.

Features

  • Low on-resistance.
  • Capable of 2.5V gate drive.
  • Low drive current Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current3 ,VGS@4.5V Drain Current3 ,VGS@4.5V Pulsed Drain Current1, VGS ID @Ta=25к ID @Ta=70к IDM Power Dissipat.

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Datasheet preview – GTS9926

Datasheet Details

Part number GTS9926
Manufacturer GTM
File Size 338.65 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTS9926 Datasheet
Additional preview pages of the GTS9926 datasheet.

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2006/05/08 REVISED DATE :2006/07/27B GTS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A Description The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features *Low on-resistance *Capable of 2.5V gate drive *Low drive current Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current3 ,VGS@4.5V Drain Current3 ,VGS@4.
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