GTS9926 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

GTS9926 N-CHANNEL ENHANCEMENT MODE POWER MOSFET by GTM - Datasheet Preview — Datasheet preview – GTS9926

Datasheet Details

Part number	GTS9926
Manufacturer	GTM
File Size	338.65 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GTS9926 Datasheet
Additional preview pages of the GTS9926 datasheet.

Product details

Description

The GTS9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

Low on-resistance.
Capable of 2.5V gate drive.
Low drive current Package Dimensions REF. A A1 b c D Millimeter Min. Max. - 1.20 0.05 0.15 0.19 0.30 0.09 0.20 2.90 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 6.60 4.30 4.50 0.65 BSC 0.45 0.75 0° 8° Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current3 ,VGS@4.5V Drain Current3 ,VGS@4.5V Pulsed Drain Current1, VGS ID @Ta=25к ID @Ta=70к IDM Power Dissipat.

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Published: Oct 5, 2007 |