Datasheet4U Logo Datasheet4U.com

GTS9928E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Features

  • Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS@4.5V Drain Current , VGS@4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 1 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratin.

📥 Download Datasheet

Datasheet preview – GTS9928E

Datasheet Details

Part number GTS9928E
Manufacturer GTM
File Size 442.82 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GTS9928E Datasheet
Additional preview pages of the GTS9928E datasheet.

📁 Similar Datasheet

Other Datasheets by GTM
  • GTS9922E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GTS9926 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GTS9926E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GTS217E - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • GTS6923 - P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/10/13 REVISED DATE :2005/08/10B GTS9928E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 5A The GTS9928E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Description Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS@4.5V Drain Current , VGS@4.
Published: |