GTS217E Description
Features Package Dimensions REF. A A1 b c D Millimeter Min. 1.20 0.15 0.30 0.20 3.10 REF.
GTS217E is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by GTM.
| Part Number | Description |
|---|---|
| GTS6923 | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET |
| GTS9922E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTS9926 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTS9926E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTS9928E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Features Package Dimensions REF. A A1 b c D Millimeter Min. 1.20 0.15 0.30 0.20 3.10 REF.