GTT8205S N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B GTT8205S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDS.
Features Package Dimensions REF.

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Datasheet Specifications

Part number: GTT8205S
Manufacturer: GTM
File Size: 340.88 KB
Datasheet: GTT8205S_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Vo

Applications

* Low on-resistance
* Capable of 2.5V gate drive

GTT8205S Distributors

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GTT8205S N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

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