* Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Vo
GTT8209E Datasheet (329.04 KB)
GTT8209E
GTM
329.04 KB
N-channel enhancement mode power mosfet.
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Pb Free Plating Product
ISSUED DATE :2006/08/08 REVISED DATE :
GTT8209E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) I.
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