GTT8209E N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/08/08 REVISED DATE : GTT8209E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) I.
Lower Gate Charge. Small Package Outline. RoHS Compliant Features Package Dimensions REF.

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Datasheet Specifications

Part number: GTT8209E
Manufacturer: GTM
File Size: 329.04 KB
Datasheet: GTT8209E_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Vo

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GTT8209E N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM GTT8209E-like datasheet