* Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚ 8˚ 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage G
GU85T03
GTM
300.91 KB
N-channel enhancement mode power mosfet.
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/24 REVISED DATE :
GU85T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) I.
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MITSUBISHI GATE DRIVER FOR GCT THYRISTOR
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