GWS7301E - Dual 20V N-Channel Power MOSFET

Datasheet Details

The GWS7301E is a dual low threshold gate protected MOFET designed for the small battery, cell phone, and PDA markets.

6.5A, 20V rDS(ON) = 18mΩ typ. at 4.5 Volts.
5.5A, 20V rDS(ON) = 25mΩ typ. at 2.5 Volts.
Excellent thermal characteristics.
Rated for High Electrical Overstress Performance of 15A short circuit and over current.
Integrated gate diodes provide Electro-Static Discharge (ESD) protection of 2500V HBM. Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Symbol 10 secs VDS Drain-Source Voltage VGS Gate-Source Voltage o T.

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Published: Feb 10, 2009 |