TGBLN6601-5DL8 Dual N-Channel Enhancement Mode MOSFET

Galaxy Microelectronics

Description

Dual N-Channel Enhancement Mode MOSFET TGBLN6601-5DL8 .

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Datasheet Specifications

Part number: TGBLN6601-5DL8
Manufacturer: Galaxy Microelectronics
File Size: 523.88 KB
Datasheet: TGBLN6601-5DL8-GalaxyMicroelectronics.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Features

* Super low gate charge
* Green device available
* Excellent CdV / dt effect decline
* Advanced high cell density trench technology
* Halogen free
* Qualified to AEC-Q101 standards for high reliability Mechanical Data
* Case: PDFN5×6-8LC
* Molding Compound: UL Flamma

Applications

* , should be limited by total power dissipation 5. The data is test on minimal footprint MTM0660A: September 2022 [2.2] www. gmesemi. com 2 Dual N-Channel Enhancement Mode MOSFET TGBLN6601-5DL8 Ratings and Characteristics Curves (@ TA = 25C unless otherwise specified) ID(A) 80 70 VGS = 7/10V V

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TGBLN6601-5DL8 Dual N-Channel Enhancement Mode MOSFET Galaxy Microelectronics

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