1N5831R, 1N5829 - Silicon Power Schottky Diode

GeneSiC

Datasheet Details

Part number	1N5831R, 1N5829
Manufacturer	GeneSiC
File Size	840.54 KB
Description	Silicon Power Schottky Diode
Datasheet	1N5829-GeneSiC.pdf
Note	This datasheet PDF includes multiple part numbers: 1N5831R, 1N5829. Please refer to the document for exact specifications by model.

High Surge Capability.
Types up to 40V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward cur.

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Published: Jun 5, 2017 |