1N5826R, 1N5826 - Silicon Power Schottky Diode

GeneSiC

Datasheet Details

Part number	1N5826R, 1N5826
Manufacturer	GeneSiC
File Size	875.11 KB
Description	Silicon Power Schottky Diode
Datasheet	1N5826-GeneSiC.pdf
Note	This datasheet PDF includes multiple part numbers: 1N5826R, 1N5826. Please refer to the document for exact specifications by model.

High Surge Capability.
Types from 20 V to 40 V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous for.

📁 1N5826R Similar Datasheet

1N5820 - SCHOTTKY BARRIER RECTIFIERS (MotorolaInc)
1N5820-G - Schottky Barrier Rectifier (Comchip Technology)
1N5820S - SCHOTTKY BARRIER RECTIFIER DIODES (EIC discrete Semiconductors)
1N5820US - 3 AMP SCHOTTKY BARRIER RECTIFIERS (Compensated Deuices Incorporated)
1N5821 - Schottky Diodes (Kexin)
1N5821-G - Schottky Barrier Rectifier (Comchip Technology)
1N5821S - SCHOTTKY BARRIER RECTIFIER DIODES (EIC discrete Semiconductors)
1N5821US - 3 AMP SCHOTTKY BARRIER RECTIFIERS (Compensated Deuices Incorporated)

Other Datasheets by GeneSiC

Published: Jun 5, 2017 |