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GC2X100MPS06-227 - Silicon Carbide Schottky Diode

GeneSiC

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Datasheet Details

Part number	GC2X100MPS06-227
Manufacturer	GeneSiC
File Size	340.42 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GC2X100MPS06-227-GeneSiC.pdf

GC2X100MPS06-227 Product details

Features

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
3000 V Isolation for Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speed Package 3 VRRM IF (Tc = 100°C) QC 4 = 650 V = 272 A.
= 320 nC.
2 1 SOT-227 (Isolated Base) Advantages.
Lo.

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Published: May 6, 2019 |