GC2X100MPS06-227 Silicon Carbide Schottky Diode

GeneSiC

Description

GC2X100MPS06-227 650V 200A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode .

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GC2X100MPS06-227 Datasheet Preview — Preview of GC2X100MPS06-227 PDF

Datasheet Specifications

Part number: GC2X100MPS06-227
Manufacturer: GeneSiC
File Size: 340.42 KB
Datasheet: GC2X100MPS06-227-GeneSiC.pdf
Description: Silicon Carbide Schottky Diode

Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* 3000 V Isolation for Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive

Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supply (SMPS)
* Uninterruptible Power Supply (UPS)
* Motor Drives
* Freewheeling / Anti-parallel

GC2X100MPS06-227 Distributors

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GC2X100MPS06-227 Silicon Carbide Schottky Diode GeneSiC

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