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GC2X8MPS12-247 - Silicon Carbide Schottky Diode

GeneSiC

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Datasheet Details

Part number	GC2X8MPS12-247
Manufacturer	GeneSiC
File Size	2.03 MB
Description	Silicon Carbide Schottky Diode
Datasheet	GC2X8MPS12-247-GeneSiC.pdf

GC2X8MPS12-247 Product details

Features

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speeds Package Case A A K TO-247-3 VRRM IF (Tc = 135°C) QC = 1200 V = 40 A.
= 66 nC.
Case A KA Advantages.
Low Standby Power Losses.
Improved Circuit Efficiency (Lo.

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Published: May 6, 2019 |