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GR1500JT17-263 - Silicon Carbide Junction Transistor

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GeneSiC

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GR1500JT17-263 Silicon Carbide Junction Transistor by GeneSiC - Datasheet Preview — Datasheet preview – GR1500JT17-263

Datasheet Details

Part number	GR1500JT17-263
Manufacturer	GeneSiC
File Size	578.77 KB
Description	Silicon Carbide Junction Transistor
Datasheet	GR1500JT17-263 Datasheet
Additional preview pages of the GR1500JT17-263 datasheet.

Product details

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Short-Circuit Withstand Capability.
Lowest-in-.

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Published: May 6, 2019 |