MBR300150CTR, GeneSiC
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive
MBR300150CT thru MBR300200CTR
VRRM.
MBR300100CT, Naina Semiconductor
Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR30045CT thr.
MBR300100CT, GeneSiC
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR30045CT thru MBR300100CTR
VRRM =.
MBR300100CTR, Naina Semiconductor
Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR30045CT thr.
MBR300100CTR, GeneSiC
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR30045CT thru MBR300100CTR
VRRM =.
