MBR300150CT - Silicon Power Schottky Diode

Product Overview

GeneSiC

Part number	MBR300150CT
Manufacturer	GeneSiC
File Size	696.80 KB
Description	Silicon Power Schottky Diode
Datasheet	MBR300150CT Datasheet
Additional preview pages of the MBR300150CT datasheet.

High Surge Capability.
Types from 150 V to 200 V VRRM.
Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 t.

📁 Similar Datasheet

MBR300100CT - 300 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)
MBR300100CTR - Schottky Power Diode (Naina Semiconductor)
MBR30020 - 300 Amp Rectifier 20 to 45V olts Schottky Barrier (Micro Commercial Components)
MBR30030 - 300 Amp Rectifier 20 to 45V olts Schottky Barrier (Micro Commercial Components)
MBR30030CTR - Schottky Power Diode (Naina Semiconductor)
MBR30035 - 300 Amp Rectifier 20 to 45V olts Schottky Barrier (Micro Commercial Components)
MBR30035CT - 300 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)
MBR30035CTR - Schottky Power Diode (Naina Semiconductor)

Other Datasheets by GeneSiC

Published: Jun 27, 2019 |