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MBR300150CT - Silicon Power Schottky Diode

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 150 V to 200 V VRRM.
  • Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 t.

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Datasheet Details

Part number MBR300150CT
Manufacturer GeneSiC
File Size 696.80 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR300150CT Datasheet
Additional preview pages of the MBR300150CT datasheet.

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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR300150CT(R) Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IFSM Maximum forward voltage (per l
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