Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR30045CT thru MBR300100CTR
Silicon Schottky Diode, 300A
TWIN TOW
MBR300100CT, Naina Semiconductor
Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR30045CT thr.
MBR300100CT, GeneSiC
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR30045CT thru MBR300100CTR
VRRM =.
MBR300100CTR, GeneSiC
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR30045CT thru MBR300100CTR
VRRM =.
MBR300150CT, GeneSiC
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive
MBR300150CT thru MBR300200CTR
VRRM.
MBR300150CTR, GeneSiC
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive
MBR300150CT thru MBR300200CTR
VRRM.