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MBR6035R - Silicon Power Schottky Diode

This page provides the datasheet information for the MBR6035R, a member of the MBR6020 Silicon Power Schottky Diode family.

Features

  • High Surge Capability.
  • Types from 20 V to 40V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6020 thru MBR6040R VRRM = 20 V - 40 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6020 (R) MBR6030 (R) MBR6035 (R) MBR6040 (R) Repetitive peak reverse voltage RMS reverse voltage DC block.

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Datasheet Details

Part number MBR6035R
Manufacturer GeneSiC
File Size 723.39 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR6035R Datasheet
Additional preview pages of the MBR6035R datasheet.

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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6020 thru MBR6040R VRRM = 20 V - 40 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6020 (R) MBR6030 (R) MBR6035 (R) MBR6040 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
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